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Title:
 
Growth and Characterization of Si Nanodot Multilayers in SiC Matrix
 
Author(s):
 
C. Summonte, S. Mirabella, R. Balboni, A. Desalvo, I. Crupi, F. Simone, A. Terrasi
 
Keywords:
 
Quantum Dot, Silicon Carbide, Nanoparticle
 
Topic:
 
Advanced Photovoltaics
Subtopic: New Types of Cells and Modules
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 1DV.2.55
 
Pages:
 
730 - 733
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-1DV.2.55
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Preliminary experimental results on the fabrication and characterization of Si nanodot multilayers embedded in SiC matrix are presented. Nanometric Si crystals are obtained by thermal annealing of hydrogenated SiCx/SiC multilayers deposited by PECVD onto (001) Si and fused quartz substrates. The samples have been investigated by Transmission Electron Microscopy, Scanning Electron Microscopy, X-ray diffraction, IR optical absorption and UV-VIS-near IR transmittance. Although Si nano-dots formation requires high temperature thermal annealing, we show as the initial low temperature thermal annealing for H out-diffusion is a critical step of the fabrication process.