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Growth and Properties of Cu2ZnSnSe4 Films on Flexible Metallic Substrates
V.F. Gremenok, R. Juskenas, T.V. Piatlitskaya, K. Bente, A.V. Stanchik, S.A. Bashkirov, R. Giraitis, A. Selskis, A.N. Pyatlitski, V.A. Solodukha, C. Berthold, K. Nickel
Electrodeposition, Flexible Substrate, Thin Film (TF), Characterisation, Characterization, CZTS
Thin Film Photovoltaics
Subtopic: CI(G)S, CdTe and Related Thin Film Solar Cells and Modules
Event: 33rd European Photovoltaic Solar Energy Conference and Exhibition
Session: 3CV.1.50
1081 - 1084
ISBN: 3-936338-47-7
Paper DOI: 10.4229/EUPVSEC20172017-3CV.1.50
0,00 EUR
Document(s): paper


Cu-Sn-Cu-Zn (CZT) precursor films on tantalum (Ta) and molybdenum (Mo) foil substrates were electrochemically deposited in two-electrode cell in galvanostatic mode, further annealed and selenized at elevated temperatures. Modern X-ray diffraction, Raman spectroscopy, energy dispersive X-ray analysis, scanning electron microscopy and photo electrochemical characterization methods have been used for the determination of the physical characteristics of films. XRD measurements showed that phase formation in Cu2ZnSnSe4 films depends both on the composition ratio in the precursors and on the processing regimes. It has been determined that the as-deposited film contains up to four metallic phases. The pre-annealing of metallic films resulted in the formation of micro-meter size grains of the -Cu6.26Sn5 and -Cu5Zn8 phases. XRD studies of Cu-Sn-Cu-Zn precursor layers selenized at temperatures 400 - 550 OC have shown the formation of Cu2ZnSnSe4 thin films. However, the selenized films contained ZnSe and CuSe phases. The amount of ZnSe decreased with selenization temperature. The Cu2ZnSnSe4 films on metallic substrates are densely packed with compact faceted grain structure and without any voids on the surface. The photo electrochemical results showed that all thin films are photoactive and have р-type conductivity.