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GaAs p-on-n Solar Cells with MOVPE Growth Rate of 120 μm/h
H. Sodabanlu, A. Ubukata, K. Watanabe, T. Sugaya, Y. Nakano, M. Sugiyama
Gallium Arsenide Based Cells, III-V Semiconductors, Photovoltaic (PV)
Concentrator and Space Photovoltaics
Subtopic: III-V-Based Devices for Terrestrial and Space Applications
Event: 35th European Photovoltaic Solar Energy Conference and Exhibition
Session: 4CO.5.2
956 - 958
ISBN: 3-936338-50-7
Paper DOI: 10.4229/35thEUPVSEC20182018-4CO.5.2
0,00 EUR
Document(s): paper


The growth rate of GaAs in our MOVPE reactor has been boosted to 120 μm/h which is limited by the current mass flow controllers of trimethylgallium bubblers. Effects of growth rate on the quality of GaAs and the efficiency of p-on-n solar cells were investigated. The minority hole lifetime in n-GaAs was clearly shortened with an increase in growth rate from 20 to 90 and 120 μm/h using the same growth conditions. The GaAs p-on-n solar cells comprising of 2-μm-thick n-GaAs base grown at 20, 90 and 120 μm/h using a V/III ratio of 20 were evaluated under 100 mW/cm2 AM1.5G illumination. Because of short hole lifetime in base layer, the Jsc as well as conversion efficiency obviously decreased with an increase in growth rate. A degradation of carrier extraction from n-GaAs base layer was revealed by external quantum efficiency spectra at long wavelength range. The average efficiency was diminished from 24.51 to 23.77% when the growth rate of n-GaAs was increased from 20 to 120 μm/h.