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Title:
 
Gettering Variation and Lifetime Characterization on Intentionally Iron, Nickel and Chromium Contaminated Multicrystalline Silicon Wafers
 
Author(s):
 
M. Blazek, W. Kwapil, J. Schön, W. Warta, G. Coletti
 
Keywords:
 
Gettering, Lifetime, Metallurgical-Grade, Impurities, Multicrystalline-Silicon
 
Topic:
 
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Materials and Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 2DV.1.12
 
Pages:
 
2032 - 2036
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-2DV.1.12
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Gettering experiments have been performed using multi-crystalline silicon wafers from highly contaminated feedstock. The transition metal contaminants under investigation were iron, nickel and chromium. A series of gettering variations was accomplished including internal gettering, aluminum gettering and phosphorus diffusion gettering in combination with three different temperature-time profiles. Lifetime characterization by the means of MWPCD and QSSPC showed that a longer tail of moderate temperature after a high temperature firing step might be useful to enhance carrier lifetimes of highly contaminated material.