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Ga-Doped Single Crystal Wafer Production
M. Konyar, N. Yıldırım, F.S. Yıldırım, E. Uçar, O. Aydin, W. Tao, M. Liang, W. Jooss, F. Es
Silicon Materials and Cells
Subtopic: Feedstock, Crystallisation, Wafering, Defect Engineering
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.4.7
ISBN: 3-936338-78-7
0,00 EUR
Document(s): poster


Gallium (Ga) doped single crystal ingots at (001) orientation were produced by the Czochralski method applying doping concentration level at 1016 at/cm3 Before initializing experiments, all conditions were based on theoretical calculations. Resistivity values discovered the same with the theory. Lifetime measurements were conducted, and impurity content of the monocrystalline structures were analysed by FT-IR spectrometry. All variables of the experiment found strongly correlated with the theory. PERC type bifacial solar cells at 22.3% efficiency at maximum were processed and used for the production of bifacial G/G 400 W modules. LID and LeTID tests were conducted to discover stability of cells and modules.