Title:	Growth and Structural Characterization of GaSb/GaAs Quantum Dots: Prospective Applications in Photovoltaic Cells
Author(s):	C.C. Ahia, E.L. Meyer, N. Tile
Keywords:	GaSb, Quantum Dots, III-V Semiconductors, High-Efficiency, Substrates
Topic:	Perovskites and Other Non-Silicon Materials and Devices, Multijunctions/Tandems
Subtopic:	III-V and Related Compound Semiconductors
Event:	38th European Photovoltaic Solar Energy Conference and Exhibition
Session:	3BV.2.38
Pages:	476 - 479
ISBN:	3-936338-78-7
Paper DOI:	10.4229/EUPVSEC20212021-3BV.2.38
Price:	0,00 EUR
Document(s):	paper, poster

Abstract/Summary:

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In an attempt to develop high quality GaSb quantum dots (QDs) on GaAs substrate for prospective application in optoelectronic device based on p-n junction, the results of cross-sectional scanning transmission electron microscopy (STEM) measurements, electron energy loss spectroscopy (EELS) elemental mapping analysis and optical transitions of metalorganic vapor phase epitaxy (MOVPE) grown GaSb QDs are presented in this study. Cold capping and growth interruption was found to be favorable for the epitaxial growth of densely populated GaSb QDs while simultaneously preserving the shape of the QDs after capping. The thermal activation (Ea) energy deduced for competing non-radiative processes in the capped samples using applicable deconvolution technique and least-squares fits is = 320.4 ± 1.2 meV. Results from the photoluminescence (PL) spectra shows a quick reduction in intensity of the higher energy wetting layer (WL) peaks at high temperatures compared with the peaks corresponding to QDs at lower energy which can be attributed to improved migration of holes from the WL to the QD at elevated temperature. The growth conditions adopted in this study are promising for the deposition of high quality stack of GaSb QDs, an essential characteristics needed for the development of high efficiency intermediate band solar cells (IBSCs).