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Growth of ZnO Films by Plasma Assisted Reactive Evaporation with Improved Thickness Homogeneity
G. Gordillo, J. Piña
Optical Properties, ZnO, Thin Film
Evolving and Emerging Technologies: Tandems; Thin Film absorbers; III-V; New Materials and Concepts; Advanced Modelling
Subtopic: CI(G)S, CdTe and Related Thin Films; Organic and Dye-Sensitised Devices
Event: 8th World Conference on Photovoltaic Energy Conversion
Session: 2AV.2.2
324 - 327
ISBN: 3-936338-86-8
Paper DOI: 10.4229/WCPEC-82022-2AV.2.2
0,00 EUR
Document(s): paper, poster


This work focuses on the development and evaluation of a system for the deposition of ZnO thin films with improved thickness homogeneity and suitable optoelectrical properties to be used as TCO layer in solar cells, using the Plasma Assisted Reactive Evaporation (PARE) method. This development made it possible to significantly improve the inhomogeneity of the thickness of the ZnO films that were deposited using a previous version of the PARE system developed by our Group. Through modeling and theoretical simulation of the processes that take place during the deposition of ZnO thin films by the PARE method, information was obtained that allowed the implementation of a reactor with a novel design that allowed the growth of large-area ZnO films with good homogeneity in thickness. By optimizing the preparation parameters, it was possible to deposit large area ZnO thin films with similar values of resistivity and transmittance than those obtained with small area ZnO films deposited using the previous version of the reactor. ZnO films with resistivities varying between 9.5*10-4 and 2*104 Ωcm and transmittances greater than 85% (in the visible region) were achieved.