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Growth of Microcrystalline Silicon Thin Film Using 40.68 MHz PECVD System for Solar Cell Application
F.C. Tung, P.S. Wu, T.S. Chin, T. Suzukic, M.C. Huang, E. Yi-Chang, J.H. Huang
Microcrystalline-Silicon, PECVD, Thin Film Deposition
Thin Film Solar Cells
Subtopic: Amorphous and Microcrystalline Silicon Solar Cells
Event: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain
Session: 3AV.2.18
3201 - 3204
ISBN: 3-936338-26-4
Paper DOI: 10.4229/25thEUPVSEC2010-3AV.2.18
0,00 EUR
Document(s): paper


In this study, microcrystalline silicon thin films have been prepared through a mixture of silane and hydrogen gases using an excitation frequency of 40.68 MHz. For more cost reduction of solar cells, higher module efficiencies and deposition rates are required. The microstructures of μc-Si intrinsic layer might be affected by the deposition parameters, such as power densities, substrate temperatures, the ratios of gas flow rates and deposition pressures. By adjusting these deposition parameters, various electric and structures properties were investigated. The optimum deposition condition was also performed for the application of silicon thin film solar cells.