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Title:
 
Highly Accelerated Thermal Cycling Test for Short Term Examination of Photovoltaic Module Reliability
 
Author(s):
 
M. Fujimori, T. Kohno, Y. Tsuno, K. Morita
 
Keywords:
 
c-Si, Qualification and Testing, Reliability, Multicrystalline Silicon, PV Module
 
Topic:
 
OPERATIONS, PERFORMANCE AND RELIABILITY OF PHOTOVOLTAICS (FROM CELLS TO SYSTEMS)
Subtopic: PV Modules
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 5DO.12.4
 
Pages:
 
1911 - 1914
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-5DO.12.4
 
Price:
 
 
0,00 EUR
 
Document(s): paper, presentation
 

Abstract/Summary:


We have developed a highly accelerated thermal cycling (HATC) test. As previously reported, we have improved a thermal cycling (TC) test to shorten testing time by increasing the number of TC per unit time in addition to light irradiation. In this study, we investigated further enhancement of stress to reduce testing time for the TC test. From an analysis by using the Eyring model, we found that the temperature difference, T, largely affects the acceleration of TC testing. An effect of T was confirmed by performing an HATC test with T of 165oC. The result showed that the HATC test degraded a PV module nearly five times faster than by the simple repetition of a TC test in accordance with International Electrotechnical Commission (IEC) qualifications. No acceleration effect was confirmed through examination of light irradiation stress.