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Title:
 
High Open Circuit Voltage Pure Sulfide CIGS Submodule
 
Author(s):
 
H. Hiroi, Y. Iwata, S. Adachi, H. Sugimoto
 
Keywords:
 
Submodule, Pure-sulfide CuInGaS2, High open circuit voltage
 
Topic:
 
THIN FILM SOLAR CELLS AND MODULES
Subtopic: CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 3DV.1.57
 
Pages:
 
1274 - 1276
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-3DV.1.57
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Previously, 14.0% efficiency on pure-sulfide CuInGaS2 single cell was reported by Solar Frontier K.K.[1]. Regarding open circuit voltage, 960 mV was achieved. In this work, we tried the development of the puresulfide CuInGaS2 submodule via monolithic structure. For the fabrication, vacuum-based processes were used for a deposition of a Mo back electrode and a metal precursor. The pure-sulfide CuInGaS2 absorber layer was formed by a high-temperature annealing with sulfur containing gas. Then CdS buffer layer, intrinsic ZnO and InSnO window layers were deposited by chemical bath deposition and vacuum-based process, respectively. A monolithically integrated structure with seven series connections was introduced by laser and mechanical patterning. As a result, the efficiency of 13.2 % and the open-circuit voltage of 850mV on pure-sulfide CuInGaS2 thin-film submodule with anti-reflection coating has been achieved. It seems to be the first module of high performance pure-sulfide CuInGaS2 over 13.0% efficiency without KCN-etching treatment in the world.