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High Efficiency, Industrially-Relevant n-Cz Si PV via Process-Tolerant Wafers and Tunneling Passivated Contacts
B.G. Lee, S. Theingi, V. LaSalvia, J. Aguiar, W. Nemeth, M.R. Page, D.L. Young, P. Stradins
Silicon Solar Cell(s), Interdigitated Back Contact, Ion Implantation, Tunneling Passivated Contacts, Tabula Rasa
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Feedstock, Crystallisation and Wafering
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CO.1.4
396 - 398
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-2CO.1.4
0,00 EUR
Document(s): paper


High lifetime, process-tolerant wafers and low-recombination, passivated contacts for both electrons and holes, can enable high efficiency and industrially-relevant Si PV with n-type Cz material. We develop and apply an O-cluster dissolution treatment to make n-Cz wafers immune to thermal processing, maintaining high lifetime >3 ms. For low-recombination contacts, we advance tunneling passivated contacts (TPCs) based on a thin tunneling SiO2 and doped n- or p-type poly-Si. n-type TPC that are in-situ P-doped during PECVD growth reach implied Voc = 735 mV, while the performance of the corresponding p-type B-doped TPC is at 700 mV. We further develop ionimplantation doping to facilitate patterning of n- and p-type TPCs for interdigitated back passivated contact cells [1]; implied Voc of 730 and 694 mV are achieved for ion-implanted n- and p-type TPCs, respectively. Finally, we produce an IBC cell with passivated contacts with Voc = 693 mV, Jsc = 36.4 mA/cm2, FF = 69.1% and efficiency of 17.4%.