login

Search documents

Browse topics

Document details

 
Title:
 
High Efficiency, Industrially-Relevant n-Cz Si PV via Process-Tolerant Wafers and Tunneling Passivated Contacts
 
Author(s):
 
B.G. Lee, S. Theingi, V. LaSalvia, J. Aguiar, W. Nemeth, M.R. Page, D.L. Young, P. Stradins
 
Keywords:
 
Silicon Solar Cell(s), Interdigitated Back Contact, Ion Implantation, Tunneling Passivated Contacts, Tabula Rasa
 
Topic:
 
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Feedstock, Crystallisation and Wafering
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CO.1.4
 
Pages:
 
396 - 398
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-2CO.1.4
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


High lifetime, process-tolerant wafers and low-recombination, passivated contacts for both electrons and holes, can enable high efficiency and industrially-relevant Si PV with n-type Cz material. We develop and apply an O-cluster dissolution treatment to make n-Cz wafers immune to thermal processing, maintaining high lifetime >3 ms. For low-recombination contacts, we advance tunneling passivated contacts (TPCs) based on a thin tunneling SiO2 and doped n- or p-type poly-Si. n-type TPC that are in-situ P-doped during PECVD growth reach implied Voc = 735 mV, while the performance of the corresponding p-type B-doped TPC is at 700 mV. We further develop ionimplantation doping to facilitate patterning of n- and p-type TPCs for interdigitated back passivated contact cells [1]; implied Voc of 730 and 694 mV are achieved for ion-implanted n- and p-type TPCs, respectively. Finally, we produce an IBC cell with passivated contacts with Voc = 693 mV, Jsc = 36.4 mA/cm2, FF = 69.1% and efficiency of 17.4%.