Title:	How to Properly Assess Boron-Oxygen Related Degradation in Crystalline Silicon
Author(s):	A. Herguth
Keywords:	Degradation, Simulation, BO-LID
Topic:	Silicon Photovoltaics
Subtopic:	Feedstock, Crystallisation, Wafering, Defect Engineering
Event:	33rd European Photovoltaic Solar Energy Conference and Exhibition
Session:	2AV.1.43
Pages:	576 - 579
ISBN:	3-936338-47-7
Paper DOI:	10.4229/EUPVSEC20172017-2AV.1.43
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

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Boron-Oxygen related light induced degradation (BO-LID) may seriously limit the efficiency of silicon solar cells. It is therefore essential to assess its impact correctly. Within this contribution it is shown by means of simulations how temperature and doping level as well as injection level influence the degradation behavior and on which time scale degradation occurs. It is furthermore shown how regeneration may influence BO-LID results leading to spoiled interpretations. A suggestion for appropriate degradation conditions is given.