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Hydrogen States in BaSi2 by Muon Spin Rotation
Z. Xu, T. Sato, J. Nakamura, A. Koda, K. Shimomura, T. Suemasu
New Materials and Concepts for Photovoltaic Devices
Subtopic: Fundamental Studies
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 1BV.4.1
ISBN: 3-936338-73-6
0,00 EUR
Document(s): poster


Hydrogen (H) p assivation of barium disilicide BaSi 2 film is very important for their use in solar cell applications W e demonstrated the effect of H passivation on both the photo responsivity and minority carrier lifetime of BaSi 2 epitaxial films grown by molecular beam epitax y A H supply duration of 15 min enhances the photoresponsivity of the BaSi 2 films by a factor of 10 and minority carrier lifetime to 14 s, equivalent to its bulk carrier lifetime. In this study, we investigate the electronic states of H in BaSi 2 via muon spin rotation. An implanted muon (Mu ++) beam binds electrons to form muonium (Mu e ). Their response to thermal activation shows that Mu e accompanies a shal low energy level of approximately 31 meV below the conduction band edge, indicating that atomic H also serves as an electronically active donor impurity in BaSi 2 . The hyperfine frequency of Mu e is determined in longitudinal external field and corresponde d to a frequency o f 246MHz.