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Hydrogenation of Sputtered ZnO:Al Layers for Double Side Poly-Si/SiOx Integration
C. Seron, T. Desrues, F. Jay, A. Lanterne, G. Borvon, F. Torregrosa, Q. Rafhay, A. Kaminski, S. Dubois
Silicon Materials and Cells
Subtopic: High Temperature Route for Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2BO.11.6
150 - 153
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2BO.11.6
0,00 EUR
Document(s): paper, presentation


This work reports on the development of hydrogenation treatments on indium-free transparent conductive oxide (TCO) layers. The final purpose is to integrate those TCO layers on solar cells featuring double-side thin polysilicon on oxide based passivated contacts. More precisely, ZnO:Al (AZO) layers were developed with in-situ incorporation of hydrogen during their deposition by DC magnetron sputtering. The AZO films feature optical and electrical properties compatible with the elaboration of high efficiency devices. They were integrated in complete solar cells with promising performances, with a maximum conversion efficiency reaching 22.4%. These results show the possibility to move towards indium-free alternatives for contacting poly-Si on oxide based passivated contacts.