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Hydrogenated SiOy Interlayer Formed by Etching Al2O3 for MoOx Hole-Selective Contact
M. Ah Sen, A.A. Mewe, F.S. Minaye Hashemi, A. Gutjahr, R. Streekstra, J. Melskens, A.W. Weeber
Passivation, High-Efficiency, Silicon Solar Cell
Silicon Materials and Cells
Subtopic: Low Temperature Route for Si Cells
Event: 8th World Conference on Photovoltaic Energy Conversion
Session: 1CV.2.46
ISBN: 3-936338-86-8
0,00 EUR
Document(s): poster


The cell efficiency is limited by the modest surface passivation provided by the ultrathin Al2O3/SiOy interlayer. To improve the surface passivation of the SiOy interlayer, a selective etching method based on a tetramethylammonium hydroxide (TMAH) solution is developed. This etching method consists of removing the bulk of a highly passivated Al2O3 film without damaging the SiOy present at the Si interface; deposition of Al2O3 on Si results in the natural formation of a ~1 nm ultrathin SiOy interlayer and is the origin of the chemical passivation. By using this etch method, the highly passivated SiOy interlayer can be obtained and used as a tunneling interlayer for the MoOx contact. As a result, excellent surface passivation with an average iVoc of 709 mV was achieved with our MoOx/SiOy contact on a textured 6” Si substrate.