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High-Throughput, In-Line ALD Al2O3 System
E.H.A. Granneman, P. Vermont, V. Kuznetsov, M. Coolen, K. Vanormelingen
Deposition, Manufacturing and Processing, Passivation
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Manufacturing Issues and Processing
Event: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain
Session: 2CV.1.62
1640 - 1644
ISBN: 3-936338-26-4
Paper DOI: 10.4229/25thEUPVSEC2010-2CV.1.62
0,00 EUR
Document(s): paper


A novel type of system for the deposition of ALD Al2O3 films is described. Wafers are transported in a linear track, floating on gas bearings without any physical contact with the track walls. During transport the wafers pass segments in which they come in contact with sequentially TMA, N2, H2O and N2. The system is made up of a large quantity of such ALD cells, each of which has a typical length of 12cm; in each of these cells 0.12nm Al2O3 is deposited. The dimensions of the pre-cursor injection lines and the pressures and flows are selected such that no mixing of the precursors take place inside the system. This results in a system that operates under atmospheric conditions with a throughput of 3600 wafers per hour, with easy automation, no moving parts (except the wafers) and no deposition on the track walls. Al2O3 films with thicknesses in the range 5-24nm were deposited with the following electrical performance: effective lifetimes on 200 μm thick FZ wafers in the range 1.5-2.5ms, dropping to 0.6-0.8ms after a firing-type anneal and on CZ wafers 0.2-0.7ms after firing.