Title:	Inline Ion Doping System for High Efficiency Low Cost Si Solar Cell
Author(s):	Y. Murakami, T. Soga, K. Nakamura, Y. Ohshita
Keywords:	c-Si, Doping, Silicon Solar Cell(s)
Topic:	WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Subtopic:	Silicon Solar Cell Improvements
Event:	28th European Photovoltaic Solar Energy Conference and Exhibition
Session:	2BV.2.4
Pages:	1225 - 1227
ISBN:	3-936338-33-7
Paper DOI:	10.4229/28thEUPVSEC2013-2BV.2.4
Price:	0,00 EUR
Document(s):	paper, poster

Abstract/Summary:

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We investigated a new inline ion doping system, so-called ion shower, for crystalline Si solar cell and confirmed that this system has huge potential to improve cell efficiency and reduce production cost. After boron (B) ion was doped into Cz Si wafer with various process parameters using this system, the annealing step was done. We were able to make B doped layer and take effective control of sheet resistance (s) and doping profile. Additionally, useful knowledge and suggestions about the mechanism of ion doping were gotten from the series of evaluations. In conclusion, we were able to make intended B doped layer using the ion shower doping system by control of doping and annealing parameters. Several features of this system are big advantages to realize high efficiency low cost cell fabrication process.