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Influence of Shape and Size of Silicon Carbide Grits on Wire Saw Cutting Efficiency
L. Quebette, A.M. Popa, A. Bakshi, Y. Boussant-Roux, P.M. Nasch
c-Si, Silicon Carbide, Wafering, Wire Saw
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Feedstock, Crystallisation and Wafering
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 2BO.2.4
1094 - 1097
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-2BO.2.4
0,00 EUR
Document(s): paper


One of the most important steps in today’s crystalline silicon (c-Si) photovoltaic (PV) industry is slicing silicon (Si) ingots by means of a silicon carbide (SiC) abrasive suspension using a multi-wire slurry saw (MWSS). In this technology, Si material usage yield (Si substrate (wafer) surface area produced per kilogram of Si material loaded in the MWSS tool - m2/kg) increases with decreasing wafer thickness, wire diameter, and abrasive grit size. The goal of this paper is to provide the PV crystalline Si wafering industry with further knowledge on the impact of abrasive grit properties (size and shape) on slicing efficiency and wafer quality (TTV and kerf loss). The joint efforts of a SiC grit producer and a MWSS manufacturer has led to a comprehensive study. A good correlation between laboratory equipment and wire saw has been found. The results indicate that material removal rates increase with increasing grit size and decreasing circularity. The impact of grit shape on material removal rate and wafer quality is elucidated for the first time in multi-wire silicon slicing.