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Intrinsic Transport in Non-Uniformly Doped Si Regions
L. Abenante, M. Izzi
Recombination, Simulation, Modelling / Modeling, Silicon
New Materials and Concepts for Solar Cells and Modules
Subtopic: Fundamental Studies
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 1BV.5.13
138 - 140
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-1BV.5.13
0,00 EUR
Document(s): paper, poster


We present the exact analytical solution to minority-carrier transport in a non-uniformly doped Si region and the expression for emitter saturation current density, Jo, for the case, where diffusivity is unaltered by doping and lifetime is only determined by Auger recombination. We call this case "intrinsic transport". Numerical simulations show that, at negligible SRH recombination, assuming intrinsic transport also at doping levels lower than 5×1018 cm-3 in both n- and p-type emitters is reasonable. We apply the previous issues to fit reported data of Jo in both n- and p-type emitters as a function of sheet resistance, RSHEET. To this aim, an analytical expression for Jo(RSHEET) is derived.