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Improved Performance of III-V Multi-Junction Solar Cells Fabricated with Indium-Tin-Oxide Electrodes
R.-H. Horng, Y.-C. Kao, S.-L. Ou, F.-L. Wu, S.-H. Shi
ITO Films, Anti-Reflection Layer, Multi-Junction Solar Cell, Solar Cells, InGaP / GaAs
Concentrator and Space Applications
Subtopic: III-V-based Devices for Terrestrial and Space Applications
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 4CO.6.3
1372 - 1374
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-4CO.6.3
0,00 EUR
Document(s): paper


In this study, three front-side electrodes consisting of AuGe/Au metal-finger with anti-reflective layer (ARL), ITO-finger with ARL, and ITO-overcoated types without ARL were fabricated for InGaP/GaAs dual-junction solar cells, and samples A, B, and C were used to denote these three devices, respectively. For the sample C with ITO-overcoated electrode, the 200-nm-thick ITO film with a high transmittance of 91% in the visible wavelength range was deposited. The results obtained from the current density-voltage measurements indicated the short-circuit current densities (Jsc) of samples A, B, and C are 9.61, 11.16, and 11.65 mA/cm2, respectively. Meanwhile, the conversion efficiencies of these three solar cells are measured to be 17.50%, 20.41%, and 20.92%, respectively. After replacing the AuGe/Au metal-finger electrode with the ITO-overcoated electrode, there is 19.5% improvement in the conversion efficiency occurred in the device. Moreover, because the ITO front-side electrode can cover overall surface of the device, all regions on the surface of sample C would extract the electrons, resulting in the highest Jsc. Not only, the ITO was also used to be ARL and enhanced the device performance.