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Influence of Grains Size and Grains Boundaries Recombination on the Space-Charge Layer Thickness Z of Emitter-Base Junction's n+-p-p+ Solar Cell
I. Barro, S. Mbodji, M. Ndiaye, E. Ba, G. Sissoko
Capacitance, Grain Size, Polycrystalline Solar Cell, Grain Boundary
Advanced Photovoltaics
Subtopic: Fundamental Studies
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 1CV.2.63
604 - 607
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-1CV.2.63
0,00 EUR
Document(s): paper


This intent paper presents an n+-p-p+ junction solar cell. The generated carriers’ density expressions has been obtained by taking account to the grain size g, the recombination velocities such as Sgb at the grains boundaries, Sb at the back side and SF at the junction. From the normalized carriers density plot versus the base depth, we study the space-charge layer thickness Z versus various parameters such as the grain size g, the grain boundaries recombination velocity Sgb and the wavelength l, by operating on open circuit voltage. Hence, this allows us to establish the relation between Z and the diffusion capacitance and determine the grain size g and the grains boundaries effects on the diffusion capacitance when the solar cell is illuminated on the front side, rear side and both sides simultaneously.