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Influence of the Quantum Dot Capping Procedure on the Density of Defects in InAs/GaAs Quantum Dot Intermediate Band Solar Cells
D.N. Micha, E.C. Weiner, R. Jakomin, L.D. Pinto, M.P. Pires, P.L. Souza
Photovoltaic (PV), Intermediate Band Solar Cell, Quantum Dots, capping layer
New Materials and Concepts for Solar Cells and Modules
Subtopic: New Materials and Concepts for Cells
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 1AO.3.4
36 - 38
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-1AO.3.4
0,00 EUR
Document(s): paper, presentation


In this work, the influence of different growth conditions of the cap layer of quantum dots on the figures of merit of Intermediate Band Solar Cells is investigated. The optimized quantum dot capping procedure led to improvements in all figures of merit, namely by 7.7% in short circuit current density, 41% in open circuit voltage, 29% in fill factor and 85% in efficiency, when the temperature of the In flush process increases from 630 to 700 ºC. We attribute the improvement in the devices’ performance to a lower density of Shockley-Read-Hall recombination centers, as the analysis of the dark current points out. Furthermore, the short circuit current density raises by 6.9% when compared to the control solar cell (without quantum dots) due to subbandgap absorption.