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Investigation on the Surface Texturing of the Casting Quasi-Single Crystal Silicon
B. Zhao, W. Lian, S. Zhang, Q. Wei, Z. Ni, D. Hu, H. Qian
Crystalline Silicon, Texture, Casting, PERC, Quasi-single
Silicon Materials and Cells
Subtopic: Homojunction Solar Cells
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.1.8
486 - 488
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-2DV.1.8
0,00 EUR
Document(s): paper


QSC-Si(casting quasi-single crystalline silicon) has its special crystal structure, which has a great influence on the texturing results. The texturing methods should be chosen to achieve the best appearance uniformity and conversion efficiency of the cell. Compared three different texturing methods, it was found that the alkaline is the optimal texturing methods, which can achieve the lowest reflection and highest conversion efficiency. Though the MACE methods can greatly ease the color mismatch arise from the different crystal structure in QSC-Si, the rear side recombination is an obstacle for high conversion efficiency. Low etching amount results in poor polishing of rear side of the MACE surface, while high etching amount enlarges the serious recombination effect of small angle grain boundary and wafer breakage. With PERC cell becoming more and more conventional products, alkaline texturing method will become the most widely used texturing method for mass production of QSC-Si.