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Interplay of Intrinsic and Doped Amorphous Silicon Layer and ITO Properties and Process Conditions on Contact Passivation in Silicon Heterojunction Cells
T.S. Yadav, H. Sivaramakrishnan Radhakrishnan, A. Kottantharayil, I. Gordon, J. Poortmans
Heterojunction, ITO, Passivation, a -Si:H
Silicon Materials and Cells
Subtopic: Heterojunction Solar Cells
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.1.68
572 - 574
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-2DV.1.68
0,00 EUR
Document(s): paper


In heterojunction with intrinsic-thin layer (HIT) solar cell and silicon heterojunction interdigitated back contact (SHJ-IBC) solar cell, intrinsic amorphous silicon layer (a-Si:H(i)) is used for passivation and carriers flow through tunneling and thermionic emission mechanisms. It is capped with the doped amorphous silicon layer and transparent conductive oxide (TCOs) for carrier selectivity and transport. Generally, the thickness of a-Si:H(i) layer used in HIT and SHJ-IBC cells is 5-10 nm. In this paper, the impact of the reduction in a-Si:H(i) layer thickness below 5 nm and deposition temperatures on passivation quality are investigated. Further, the impact of both p-doped/n-doped amorphous silicon layer deposition and TCO sputtering in different process conditions on contact passivation are also discussed. This detailed study is done using ellipsometry, photoluminescence (PL) imaging and minority carrier lifetime measurements.