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Improving Perovskite Solar Cells Stability through Modification of the p-Type Contact
M. Dussouillez, A. Paracchino, L. Ding, S.-J. Moon, B.A. Kamino, A. Walter, L. Lauber, G. Christmann, S. Rafizadeh, C. Ballif, S. Nicolay
Perovskites and Other Non-Silicon Materials, MJs and Tandems
Subtopic: Perovskites
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BO.10.3
ISBN: 3-936338-73-6
0,00 EUR
Document(s): presentation


After only ten years of research, the efficiency of perovskite solar cells (PSCs) has soared from 3.9% to 25.2%1. However, the future commercialization of perovskite solar cell relies on improving their stability under realistic operation conditions. Depending on their composition, hybrid organic-inorganic perovskites are more or less prone to degradation under exposure to high humidity, UV-light irradiation and high thermal stress. Beyond potential intrinsic instabilities of the perovskite absorber material itself, the interface between the perovskite and the contact layers plays a critical role in determining the long-term stability of encapsulated devices. One widely used material for the p-type contact in perovskite cells is nickel oxide (NiO), which has a wide band gap enabling high light transmission and favourable energy band alignment to the perovskite to selectively extract the holes. Moreover, this material can be deposited using magnetron sputtering, which is a widely accepted deposition technique within industry, and allows a fine control of the p-type selectivity and conductivity through controlled oxygen incorporation (Fermi level lowering).2 Despite these attributes, there is a lack of understanding in the literature about how uncontrolled changes in the stoichiometry of NiO contact layers affect the long-term stability at 85°C of perovskite devices using NiO as hole transport material (HTM). From the NiO composition to the HTM stack, modifications are tested to suppress drawbacks of this material and make industrial and stable PSCs.