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Title:
 
Investigation of the Current Induced Degradation for Gallium Doped Silicon Solar Cells
 
Author(s):
 
M.-A. Tsai, Y.-S. Long, C.-W. Kuo, T.-M. Kuan, C.-Y. Yu, T.-C. Wu
 
Keywords:
 
LeTID, Accelerated Degradation Test, CIT
 
Topic:
 
Silicon Materials and Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.1.49
 
Pages:
 
302 - 303
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2CV.1.49
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


For the high efficiency solar cell technology, the light-induced-degradation (LID) and the light-and-elevated temperature-induced-degradation (LETID) are still an important issue need to be solved by the PV industries. In this work, We design the different solar cell to see the LETID phenomenon, one is using with/without Gallium doped solar cell, another is using 4 different fabricated process by different companies. Using the Gallium doped solar cell reveals an antiresistance for LETID, but form another result show that it still influenced by fabricated process.