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Title:
 
Investigation of Effect of Poly-Si Impurities on Cz-Ingot to Solar Module Production
 
Author(s):
 
F. Çambay Kuban, E. Uçar, N. Yıldırım, F.S. Yıldırım, F. Es
 
Keywords:
 
Czochralski (Cz), Impurities, Electrical Properties, Silicon Solar Cell(s)
 
Topic:
 
Silicon Materials and Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.1.48
 
Pages:
 
298 - 301
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2CV.1.48
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Achieving precise purity control by analysis methods is a crucial step in the development of semiconductor devices because impurities greatly change the basic properties (mechanical, optical, electrical, thermal) of semiconductors. This paper presents and analyses the photovoltaic conversion performance of cell and modules from ingots grown by Czochralski (Cz) method using two poly-Si suppliers (Supplier1 and Supplier2) with different purity levels. Effects of raw material quality, ingot and wafer lifetime, cell efficiency, module power and light induced degradation (LID) mechanism are investigated. It has been observed that Supplier2 poly-Si has lower Cr impurity than for Supplier1 and also does not contain Ni impurities. Although it was expected that the impurities originating from Ni and Cr should decrease the yield, trial production showed that the effect of metallic impurities on productivity at these levels is insignificant.