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Impact of Cut Edge Recombination in High Efficiency Solar Cells – Measurement and Mitigation Strategies
N. Chen, D. Tune, F. Buchholz, A. Halm, V.D. Mihailetchi
Photoluminescence, Edge Recombination, Silicon (Si) Solar Cells, Edge Repassivation
Silicon Materials and Cells
Subtopic: Characterisation & Simulation of Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.1.12
253 - 256
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2CV.1.12
0,00 EUR
Document(s): paper


Many new module designs feature cut cells, especially now that cell and module manufacturers are introducing larger wafer formats (166mm, 182mm, and even 210mm in edge length). However, the cutting procedure introduces extra power losses. This recombination occurs when the cut edge is damaged by a high power laser or exposed to the air without passivation. In this paper, we employ high resolution photoluminescence to investigate the effect of edge recombination on interdigitated back contact solar cells. Edge recombination losses are compared by comparing various photoluminescence profiles obtained from the samples with different structures and cut techniques. First, we compare various laser cutting techniques at various locations. Two questions are addressed: where to cut the cells and how to cut them. Last, we compare the repassivation ability of the samples with different cutting techniques and structures. Repassivation can be used to mitigate edge cut losses with specific cutting techniques.