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Iron Quantification in Crystalline Silicon Solar Cells From Open-Circuit Voltage Measurements
A. Herguth
Simulation, Iron, Characterization, Quantification, Silicon Solar Cell
Silicon Materials and Cells
Subtopic: Characterisation & Simulation of Si Cells
Event: 8th World Conference on Photovoltaic Energy Conversion
Session: 1DV.4.13
173 - 175
ISBN: 3-936338-86-8
Paper DOI: 10.4229/WCPEC-82022-1DV.4.13
0,00 EUR
Document(s): paper


Iron contamination in crystalline silicon can be quantified with high sensitivity thanks to its peculiarity to switch between interstitial and dopant-paired form, each exhibiting specific recombination activity. Typically, this is done by an iso-injective comparison of effective excess carrier lifetimes with iron either being interstitial or paired form. Within this contribution it is shown by means of PC1D simulations that the procedure works for solar cells as well, exploiting that effective lifetimes can be calculated from Voc data. Furthermore, it is shown that even a comparison of Voc’s taken at a constant intensity, meaning differing injection, already allows for a good estimation of iron contamination. Using multiple intensities allows an even better quantification.