Title:	Investigation of the Front Side Anti-Reflection Coating Layer on M10 PERC Solar Cells
Author(s):	C.W. Kuo, T.M. Kuan, Y.C. Li, W.L. Chueh, L.G. Wu, S.C. Lin, C.Y. Yu
Keywords:	PERC, PID, SiOxNy
Topic:	Silicon Materials and Cells
Subtopic:	Manufacturing & Production of Si Cells
Event:	8th World Conference on Photovoltaic Energy Conversion
Session:	1DV.4.30
Pages:	191 - 193
ISBN:	3-936338-86-8
Paper DOI:	10.4229/WCPEC-82022-1DV.4.30
Price:	0,00 EUR
Document(s):	paper, poster

Abstract/Summary:

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In this work, we demonstrated that the p-type PERC solar cells can also be improved front side performance based on front side SiN/SiON anti-reflection coating (ARC) layer structure. Improved ARC layer was obtained by depositing the SiON layer after the SiN layer. By changing the n value of SiON layer through the process parameters, it can be found that the short wavelength can be improved, and the photocurrent can also be increased by about 56mA. About 0.1% gain in conversion efficiency was obtained compared to the result of reference solar cell. Finally, the potential induced degradation (PID) test of SiON PERC solar cell is also in compliance with IEC TS 62804- 1 specifications.