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JV Characteristics of Industrial Silicon Solar Cells: Influence of Distributed Series Resistance and Shockley Read Hall Recombination
J. Greulich, M. Glatthaar, A. Krieg, G. Emanuel, S. Rein
Recombination, Shading, Simulation, Modelling / Modeling, Characterisation, Characterization
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Materials and Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 2DV.1.21
2065 - 2069
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-2DV.1.21
0,00 EUR
Document(s): paper


At the end of the solar cell manufacturing process the current-density vs. voltage curves (J(U) curves) are measured to determine the solar cell’s efficiency and the mechanisms limiting the efficiency as there are resistive losses and recombination of electron hole pairs. An accurate and robust analysis of the measured curves is essential for the output power of the module and for the evaluation of the ongoing manufacturing process. In the present work it is shown that fitting the two diode model is inappropriate to quantify recombination in the space charge region and ohmic losses due to series resistance. Three fill factors, namely the fill factor of the illuminated J(U) curve, the pseudo fill factor of the sunsVoc curve and the ideal fill factor of the single diode model, are the base of a quick loss analysis that is evaluated in the present paper. It is shown that the distributed character of the series resistance and the network character of the solar cell can distort the sunsVoc curve. This induces errors in the simple analysis. An advanced current voltage curve analysis including fill factors and fit is presented