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Kinetic Description and Modeling of Potential Induced Degradation
C. Taubitz, M. Kröber, M. Schütze, M.B. Köntopp
Degradation, Reliability, Module, PID
Subtopic: PV Modules
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 4AV.5.45
3321 - 3323
ISBN: 3-936338-33-7
Paper DOI: 10.4229/28thEUPVSEC2013-4AV.5.45
0,00 EUR
Document(s): paper, poster


Potential induced degradation (PID) is one of the failure modes in today’s photovoltaic (PV)-systems with strong impact on PV-module performance. Potential-induced shunting (PIS) is one of the most severe types of PID leading to shunting of p-type silicon solar cells. Previously, the kinetics of PIS was investigated in detail. It was shown that the temperature dependence of PIS as well as regeneration from PIS is Arrhenius-like, opening the opportunity to develop a kinetic model based on Arrhenius-like expressions. In addition a so called transition-phase was found leading to continued shunting even after the voltage stress has been removed. In this work the transition-phase is investigated in detail. It is shown that this phase is only present in the PISkinetics if previous PIS stress has decreased the shunt resistance Rsh,PIS to values below 14 kcm2. It is found that the duration of the transition-phase ttransition is temperature dependent and can be described with an Arrhenius-like expression. Based on these findings a preliminary model for the kinetics of PIS was developed. This model considers temperature, as well as other environmental conditions to describe the progression of PIS for a specific location. By using meteorological data measured at Thalheim (Germany) during the year 2012 we present results modeling PIS behavior over time.