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Kerf-Free 20-150µm c-Si Wafering for Thin PV Manufacturing
F. Henley, S. Kang, Z. Liu, L. Tian, J. Wang, Y.L. Chow
Manufacturing and Processing, Wafering, Substrate
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Feedstock, Crystallisation and Wafering
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 2DP.2.2
886 - 890
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-2DP.2.2
0,00 EUR
Document(s): paper


A novel ion beam-induced cleaving process for slicing mono-crystalline silicon wafers ranging in thickness from 20μm to 150μm with near zero kerf-loss and markedly low overall cost has been developed. The process was recently demonstrated to be capable of large-area thin PV substrate manufacturing with excellent conversion efficiency and low polysilicon use. Usability of the wafers in next-generation high-efficiency PV cell manufacturing is further enhanced by its excellent surface roughness, edge quality, mechanical strength and carrier lifetime. A practical production line equipment concept for high-volume manufacturing using this kerf-free layer-transfer technology is introduced. The extension of the process to novel 20μm and substitutive 150μm wafering is also described.