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Large Area 16% Efficiency Cu(InGa)(SSe)2 Solar Module with Enhanced Bulk and Interface Characteristics
D. Lee, K.S. Heo, J. Lee, Y. Choi, S. Hyeon, D. Lee, M. Kim, J. Nam, Y. Kang, Y.-S. Kim, C. Mo, D. Beak, S.C. Park, B.-J. Kim, D.S. Kim
Subtopic: CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells
Event: 29th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3AO.6.1
ISBN: 3-936338-34-5
0,00 EUR
Document(s): presentation


We are systematically investigating the performance loss mechanism of CIGSSe solar cells with various Cu/(Ga+In) ratios (CGI) fabricated with sputter and selenization process and try to find the optimal range of CGI ratio for best performance. The effects of Cu amount in CIGSSe layer are observed with current-voltage (IV) and capacitance measurements. In view of bulk recombination process, the CIGSSe layer with high CGI ratio has low crystal quality and short minority carrier diffusion length resulting in high bulk recombination. So, bulk recombination can possibly contribute Voc and FF loss in high Cu concentration. When the CGI ratio is lower than 0.87(Cu-poor case), interface recombination is negligible. However, as CGI ratio is larger than 0.88 (Cu-rich case), high junction defect state can cause high interface recombination. Both low quality of absorber and interface in high CGI case result in drastic Voc and FF loss at device performance.