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Title:
 
Learning from the Past to Look Beyond the Roadmap of PERC Si Solar Cell Mass Production
 
Author(s):
 
P.P. Altermatt, Y. Yang, Y. Chen, D. Chen, X. Zhang, G. Xu, Z. Feng
 
Keywords:
 
ITO, Emitter, PERC, Solar Cell Efficiencies, Passivated Contact
 
Topic:
 
Silicon Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 35th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2BP.1.1
 
Pages:
 
215 - 221
ISBN: 3-936338-50-7
Paper DOI: 10.4229/35thEUPVSEC20182018-2BP.1.1
 
Price:
 
 
0,00 EUR
 
Document(s): paper, presentation
 

Abstract/Summary:


Past patterns of cell and module efficiency, fabrication cost, metallization, and growing independence from the IC industry are used to extrapolate progress into the future. It is concluded that the development of cheap Si bottom cells for tandems should be accelerated, scarce materials be avoided, and for passivated contacts to come into mainstream Si photovoltaics, it may be most advantageous to introduce them into the PERC fabrication process with the least required changes. Once both electron and hole contacts are passivated in the mainstream, it may be easier to switch from p- to n-type wafers to take advantage of higher bulk lifetimes, compared to switching to n-type cells like PERT and HJT now. In this sense, the million dollar question ‘p-type or n-type?’ may be posed too early, and concentrating the efforts on further developing PERC may be more successful. For this, a transparent passivated contact replacing the phosphorus emitter in PERC cells is suggested.