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Large Area TOPCon Cells Realized by a PECVD Tube Process
F. Feldmann, T. Fellmeth, B. Steinhauser, H. Nagel, D. Ourinson, S. Mack, E. Lohmüller, J.-I. Polzin, J. Benick, A. Richter, A. Moldovan, M. Bivour, F. Clement, J. Rentsch, M. Hermle, S.W. Glunz
Passivation, PECVD, Silicon (Si), Solar Cell
Silicon Materials and Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2EO.1.4
304 - 308
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-2EO.1.4
0,00 EUR
Document(s): paper


TOPCon is an appealing choice for next-generation solar cells as it minimizes surface recombination, enables low contact resistivities, and provides high thermal stability thereby rendering it compatible with screen-printed metallization. While TOPCon is commonly realized by low-pressure chemical vapor deposition (LPCVD), this paper discusses the use of a plasma-enhanced chemical vapor deposition (PECVD) tool, which are commonly used for deposition of SiNx or AlOx. It will be shown that thick screen-printing compatible TOPCon layers providing excellent surface passivation can be realized with such tool. Additionally, the firing stability of TOPCon/SiNx stack will be discussed and first solar cell results will be presented. The IV parameters of the best solar cell were: Voc = 691.2 mV, FF = 80.7%, Jsc = 40.4 mA/cm², and = 22.5%.