Title: |
Limitations of the Growth Rate of Silicon Mono Ingots Grown by the Czochralski Technique |
Author(s): |
F. Mosel, A.V. Denisov, B. Klipp, N. Sennova, C. Kranert, T. Jung, M. Trempa, C. Reimann, J. Friedrich |
Keywords: |
c-Si, Growth Rate, Active Crystal Cooling, Spiral Growth, Twisting |
Topic: |
Silicon Materials and Cells |
Subtopic: | Feedstock, Crystallisation, Wafering, Defect Engineering |
Event: | 37th European Photovoltaic Solar Energy Conference and Exhibition |
Session: | 2DV.2.18 |
Pages: |
468 - 473 |
ISBN: | 3-936338-73-6 |
Paper DOI: | 10.4229/EUPVSEC20202020-2DV.2.18 |
Price: |
0,00 EUR |
Document(s): |
paper, poster |