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Light Trapping in Silicon Nanowire: Correlated Absorption Depth Profile, EM-Field Distribution and Exciton Generation Rate Distribution
M.K. Hossain, A. Wajeeh Mukhaimer
c-Si, Simulation, Spectral Response, Thin Film (TF), Silicon (Si) Solar Cells
Silicon Materials and Cells
Subtopic: Characterisation & Simulation of Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.1.20
265 - 267
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2CV.1.20
0,00 EUR
Document(s): paper


Silicon nanowires (Si-NWs) have been able to draw huge attention in solar cell research particularly for their inherent and unique characteristics of light confinement. Here, we have reported correlated absorption depth profile, electromagnetic field distribution and exciton generation rate distributions for different diameters of the vertically aligned Si-NWs (coverage, ca. 6.5×108/cm2 with diameter 50-200 nm) at different spectral wavelengths. Although Si-NWs were observed to be different in size and shape in experiment investigations, for simplicity, a single Si-NW of cylindrical shape was modeled and optimized to correlate the aforementioned characteristics. Light absorption and energy flow distribution confirmed that Si-NW facilitates to confine photon absorption of several orders of enhancement whereas the energy flow is also distributed along the wire itself. On the other hand, electric field distributions and excitons generation distributions highlighted the higher probability of strongest sites compared to those of flat silicon wafer.