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Title:
 
MIS Structures for Solar Cells Perimeter Passivation
 
Author(s):
 
A. Delamarre, H. Sodabanlu, K. Watanabe, M. Sugiyama, J.-F. Guillemoles
 
Keywords:
 
Gallium Arsenide Based Cells, Passivation, Concentrator Cell/s, III-V Semiconductors
 
Topic:
 
Perovskites, other Non-Silicon-Based Photovoltaics and Multi-Junction Devices
Subtopic: III-V and Related Compound Semiconductor Based Devices
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BO.8.4
 
Pages:
 
615 - 617
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-3BO.8.4
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Perimeter recombination takes place in all photovoltaic architectures, its detrimental effect increasing with the perimeter to area ratio. A new efficient passivation method is introduced here, inspired by the working principle of MOSFETs. It consists in a Metal Insulator stack, deposited on top of the Semiconductor structure. As a transistor, it acts as a switch to prevent the flow of majority carriers towards the defective side walls. Simulation results show that the detrimental effect of perimeter recombination can be reduced by half in the particular case of a GaAs solar cell under one sun illumination. Because no chemical treatment is involved, our MIS based passivation solution can be adapted to various photovoltaic materials as a perspective. A possible additional application will be devices working under intense illumination, where resistive effects are a limiting factor.