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Title:
 
MOCVD Grown InGaAsP-Based Single Junction Solar Cells with Bandgap-Voltage Offsets Ap-proaching Radiative-Recombination-Only Limit
 
Author(s):
 
X. Li, H. Lu, G. Le, W. Zhang, G. Yang
 
Keywords:
 
II-VI Semiconductors, Multijunction Solar Cell, Solar Cell, InGaAsP
 
Topic:
 
Perovskites, other Non-Silicon-Based Photovoltaics and Multi-Junction Devices
Subtopic: III-V and Related Compound Semiconductor Based Devices
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.1.54
 
Pages:
 
693 - 695
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-3BV.1.54
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


We report on the study of InGaAsP-based single junction solar cells on InP substrates grown by MOVPE. Using the high temperature of 650 °C and growth improvements, the epitaxial InGaAsP layers presents quite good quality and therefore, remarkable photovoltaic performances for further fabricated solar cells. The experimental bandgap-voltage offsets (Woc) of the devices are approaching the theoretical values predicted using diffusion-limited model.