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Modeling and Simulation of CdZnO/ZnO Heterostructure Based Multiple Quantum Wells for Photovoltaics
G. Siddharth, R. Singh, S. Mukherjee
ASTM, MQWSC, Photon Flux Density, AM1.5G
New Materials and Concepts for Photovoltaic Devices
Subtopic: Fundamental Studies
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 1BV.4.3
62 - 64
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-1BV.4.3
0,00 EUR
Document(s): paper, poster


This work proposes replacing the intrinsic layer of p-i-n solar cell by CdZnO/ZnO heterostructure based Multiple Quantum Well after simulated evaluation of such a device’s performance. The results obtained from the simulated model in the ATLAS simulation tool shows good agreement with those from developed analytical model, in terms of performance parameters i.e. Jsc (~98%), Voc (~96%) and (~93%) matching is achieved. The effect of the number of quantum wells on the performance parameters of CdZnO/ZnO based MQWSC is analyzed. Further, the effect of well and barrier layer thickness on the conversion efficiency of the MQWSC is also investigated. Significantly, spectral irradiance from ASTM standard data sheets is used for attaining photon flux density instead of generally used Planck’s blackbody radiation law.