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Methodology to Determine Bulk Crystal Quality in Terms of Carrier Lifetime without Wafering
M. Müller, A. Weber, A.I. Kropp, M. Ehrl, T. Urban, P. Häussermann, B. Neubert, A. Albrecht, S. Seidel, R. Otto, K. Dadzis, R. Menzel, M. Trempa, C. Kranert, C. Reimann, J. Heitmann
c-Si, Defects, Lifetime, Passivation
Silicon Materials and Cells
Subtopic: Feedstock, Crystallisation, Wafering, Defect Engineering
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.2.10
449 - 451
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2DV.2.10
0,00 EUR
Document(s): paper, poster


A methodology is proposed to evaluate bulk silicon crystal quality without wafering, which supports the development and optimization of crystal growth techniques. A process sequence is developed to passivate thick slices from silicon crystals as well as silicon wafers. It consists of saw-damage removal, a RCA clean, an atomic layer deposited Al2O3 and annealing. Samples with dimensions in the range of 30 – 163 mm length and width, and 0.1 – 2.0 mm thickness can be processed. The methodology is successfully applied to evaluate the bulk carrier lifetime for potential estimations of advanced crystallization techniques and the determination of local interstitial iron, e.g. due to crucible in-diffusion.