login

Search documents

Browse topics

Document details

 
Title:
 
Novel Epitaxial GaAs Lift-Off Approach via van der Waals Interface in In2Se3 Buffer Layer
 
Author(s):
 
N. Kojima, L. Wang, Y. Ohshita, M. Yamaguchi
 
Keywords:
 
Buffer Layer, Epitaxy, Tandem, Thin Film Solar Cell, III-V Semiconductors
 
Topic:
 
Concentrator and Space Photovoltaics
Subtopic: III-V-Based Devices for Terrestrial and Space Applications
Event: 33rd European Photovoltaic Solar Energy Conference and Exhibition
Session: 4CV.4.28
 
Pages:
 
1295 - 1297
ISBN: 3-936338-47-7
Paper DOI: 10.4229/EUPVSEC20172017-4CV.4.28
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


We propose new epitaxial III-V compond layer transfer technique by peeling from Si substrate via van der Waals interface of (InxGa1-x)2Se3. To demonstrate this idea, the double layers of In2Se3 and GaAs were grown on Si(111) 4o off substrate by molecular beam epitaxy (MBE). Epitaxial growth of -In2Se3 and GaAs on Si(111) can be confirmed by the XRD pole figure measurement. The epitaxial GaAs layer was successfully transferred onto flexible PMMA sheet by just pulling in both directions. It was confirmed that GaAs layer is peeled from Si substrate via van der Waals interface in -In2Se3 layer. We propose this layer transfer technique is applicable to the fabrication of thin film flexible multi-junction solar cells. However, 60o rotation twin formation and island growth of GaAs occurred at the current growth condition. These problems should be solved by optimizing growth conditions.