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New Results on SiGeSn MOVPE Grown for Multi-Junction Solar Cells
G. Timò, G. Abagnale, M. Calicchio, M. Cornelli, N. Armani, F. Trespidi, E. Malvisi, E. Achilli, F. Annoni, B. Schineller, G. Siefer, R. Couderc
Perovskites, other Non-Silicon-Based Photovoltaics and Multi-Junction Devices
Subtopic: III-V and Related Compound Semiconductor Based Devices
Event: 36th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.1.57
699 - 703
ISBN: 3-936338-60-4
Paper DOI: 10.4229/EUPVSEC20192019-3BV.1.57
0,00 EUR
Document(s): paper


New results concerning SiGeSn deposited by MOVPE in the same growth chamber utilized for III-V deposition are reported. The ternary material has been grown on 4 and 6 inch germanium wafers, tin precipitation free, at relatively high growth temperature (490°C), with Disilane, Tin-tetrachloride and Germane as gas precursors. The SiGeSn layers have been characterized by high-resolution X-ray diffraction, Scanning Electron Microscopy, Secondary Ion Mass Spectroscopy and Electrochemical Capacitance-Voltage measurements. GaAs(N) filtered InGaP(N)/SiGeSn(N)/Ge(P) heterojunction functional devices have been manufactured and characterized by External Quantum Efficiency, Current-Voltage and Electroluminescence measurements. A Round-Robin campaign on the electrical parameters measured at different concentration factors has been carried out in order to validate the electrical data. The measured and simulated current densities of the functional devices have allowed ascertaining the potentiality of a successful integration of MOVPE grown SiGeSn ternary material in III-V Multi-junction structures