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Optical Assessment of Ga Composition in Cu(In,Ga)Se2 Electrodeposited Solar Cells: Application for Non Destructive Ga Depth Profile Monitoring
C. Insignares-Cuello, V. Izquierdo Roca, J. Lopez-Garcia, L. Calvo-Barrio, E. Saucedo, S. Kretzschmar, T. Unold, C. Broussillou, T. Goislard de Monsabert, V. Bermudez Benito, A. Pérez-Rodríguez
Subtopic: CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.6.53
ISBN: 3-936338-33-7
0,00 EUR
Document(s): poster


Cu(In,Ga)Se2 (CIGS) based thin film photovoltaic technologies have already entered the stage of industrial mass production, with commercial modules that provide stable efficiencies in the range 12-13%. Achievement of higher efficiency values at the module level is challenging due to the difficulty of controlling the different process steps on large area substrates. In particular, presence of inhomogeneities in the absorber composition with differences in the Ga content is critical for the performance of the solar modules. This requires the availability of characterization tools suitable for the non destructive analysis of the chemical composition of the layers and compatible with their implementation in-line for quality control and process monitoring. This gives a strong interest to study optical non-destructive techniques such as photoluminescence (PL) and Raman scattering, due to their ability to provide information directly related to the optoelectronic properties of the layers.