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Title:
 
Optimization of Metallic Precursor Thickness Ratio for CIGS Solar Cell Prepared by Magnetron Sputtering Process
 
Author(s):
 
S. Gulkowski, E. Krawczak, J.M. Olchowik
 
Keywords:
 
Magnetron Sputtering, CIGS, Thin Film Silicon Solar Cell
 
Topic:
 
THIN FILM SOLAR CELLS AND MODULES
Subtopic: CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells and Modules
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 3DV.3.10
 
Pages:
 
1330 - 1332
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-3DV.3.10
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Sputtering deposition is one of the cost effective method of producing CIGS solar cell. The process can be done in two steps. First one is the preparation of Cu-In-Ga precursor on SLG covered by 1μm Mo layer. In order to obtain optimized atomic ratio of CIGS absorber the CuGa/In/Cu layers with different thickness ratio were deposited by sequential sputtering of CuGa, In and CuSe targets. Different configuration of the layers deposition were tested. The surface morphology as well as EDS analysis were investigated to find sufficient thickness and good uniformity of the layers. The optimized thickness ratio of the metallic precursors was found. After this optimization the precursor layer was covered with selenium deposited from Se target in sputtering process.