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Optical and Structural, Properties of Zinc Sulfide Doped Chromium Thin Films Prepared by RF-Sputtering
C.M. Samba Vall, M. Chaik, H. El Aakib, M. Elyaagoubi, A. Agdad, A. Tchenka, A. Oueriagli, M. Aggour, A. Outzourhit
Thin Film (TF), RF Sputtering, Structural Properties, Chromium Doped Zinc Sulfur
New Materials and Concepts for Photovoltaic Devices
Subtopic: New Materials and Concepts for Cells and Modules
Event: 35th European Photovoltaic Solar Energy Conference and Exhibition
Session: 1CV.4.34
137 - 142
ISBN: 3-936338-50-7
Paper DOI: 10.4229/35thEUPVSEC20182018-1CV.4.34
0,00 EUR
Document(s): paper


Zinc sulfide and Chromium doped Zinc sulfide thin films were grown on glass and Si substrates by cathodic radio-frequency sputtering. The deposition time was fixed at 2 hours for pure Zinc sulfide and was varied from 90 minute to 3 hours for Chromium doped Zinc sulfide while the radio-frequency power of both deposited was fixed at 200W. The optical, structural, of these thin films were investigated. The optical properties (mainly the thicknesses, refractive index, and optical band gap) were examined by optical transmission measurements in the ultraviolet-visible-near Infrared wavelength range. X-ray Diffraction analysis indicated that all the sputtered Zinc sulfide and Chromium doped Zinc sulfide films have the zinc blend structure with a preferential growth orientation along the (111) ,(2 2 0),(311) direction. The crystallite size was about 33.45nm for undoped Zinc sulfide films and varied from 16.5 nm to 29.5 nm for Chromium doped Zinc sulfide with a maximum value for a deposition time of 150 minutes. Ultra violet-Visible measurements showed that the Zinc sulfide film deposited for 2 hours have transmittance higher than 70% while the transmission of Chromium doped Zinc sulfide becomes less than 40% in the visible wavelength region. Moreover, it was observed that the band gap energy of the Zinc sulfide films is 3.48 eV, while that of Chromium doped Zinc sulfide films decreases from 2.77 to 1.68 eV as the deposition time increased. FT-IR data exhibited that absorption peaks at wave number 2730.65 cm-1 for ZnS due to the stretching vibration of O-H. Also, 1200/cm and 565.02/cm corresponding to asymmetric and symmetric Zn-S stretching bond.