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Optimization of Phosphorus Implant Dose and Activation Temperature for Emitter Formation of p-Type Silicon Solar Cells
G. Bektaş, A.E. Keçeci, S. Koçak Bütüner, R. Turan
Emitter, Ion Implantation, Phosphorous, Implied Open Circuit Voltage
Silicon Materials and Cells
Subtopic: Manufacturing & Production of Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.1.39
286 - 287
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2CV.1.39
0,00 EUR
Document(s): paper, poster


Today, p-type solar cells such as monofacial and bifacial Passivated Emitter and Rear Cell (PERC) with phosphorus emitter dominate the photovoltaic industry. For emitter formation on p-type Si, ion implantation is an attractive doping method because it allows a simplified solar cell process flow. Here, we investigate the effect of phosphorus implant dose and activation temperature on the iVoc of the emitter of p-type textured Si solar wafers, which are passivated with 5 nm of thermal SiO2 capped with PECVD:SiNx. Our results show that the implanted emitter with a relatively lower dose is severely affected by activation temperature. We demonstrate iVoc of 648 mV for implanted emitter with optimum implant dose and activation temperature.