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Title:
 
Photovoltaic Properties of Homojunction CIGS Solar Cells Using Various Divalent N-Type Dopants
 
Author(s):
 
H. Hiraga, N. Nakagawa, S. Shibasaki, M. Yamazaki, K. Yamamoto, S. Sakurada
 
Keywords:
 
CIGS, Homojunction, BVS calculation, N-type Doping
 
Topic:
 
THIN FILM SOLAR CELLS
Subtopic: CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.5.37
 
Pages:
 
2299 - 2301
ISBN: 3-936338-33-7
Paper DOI: 10.4229/28thEUPVSEC2013-3BV.5.37
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


In order to investigate important factors required of N-type dopants for CIGS, various divalent ions, namely Mg, Ca, Mn Fe, Co, Ni, Cu, Zn and Cd, were doped as N-type dopants in CIGS thin films with the liquidphase doping method and homojunction cells were fabricated. A maximum conversion efficiency of 17.7% was obtained for Cd-doped homojunction cell but no photocurrents were observed for Co-, Ni- and Cu-doped cells. Comparison with conversion efficiency and formal valence (V; estimated by bond valence sum calculation, BVS) revealed that conversion efficiency depends on formal valence and shows a peak at V = +3. Ions applied in a highefficiency cell seem to act as an effective N-type dopant. The above results indicate that the important factors required of N-type dopants are the electronic configuration of the outermost electron shell and the coordination environment determining the formal valence.