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Title:
 
Phosphorus Diffusion Through Spun-On and PECVD Dielectric Layers
 
Author(s):
 
P. Juverdeanu, J. Janusonis, M. Izzi, V. Bukauskas, L. Serenelli, J. Ulbikas, A. Galdikas, V. Janusoniene
 
Keywords:
 
Diffusion, Selective Emitter, Sol-Gel, Barrier
 
Topic:
 
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Cells and Materials, Processing Technology of
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 2CV.4.9
 
Pages:
 
1357 - 1359
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-2CV.4.9
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Conditions for the effective phosphorus diffusion through the spun-on sol-gel layers were investigated and the results are presented in this work. The n+ areas were doped to obtain sheet resistance as low as 10-20Ω/sq, and surface resistance of n area which was created underneath the barrier layer was in the interval 100-3000Ω/sq with respect to diffusion temperature, barrier material and thickness.